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The BC847AQCZ is a single NPN bipolar junction transistor manufactured by Nexperia USA Inc. It utilizes the DFN1110D-3 surface-mount package, providing a compact footprint for high-density circuit designs. The device supports a maximum continuous collector current of 200 mA and withstands a collector-emitter voltage (Vceo) of 45 V. Key electrical characteristics include a collector-base breakdown voltage of 50 V and an emitter-base voltage rating of 6 V. The component features a DC current gain (hFE) range of 110 to 200 at a collector current of 2 mA and collector-emitter voltage of 5 V. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'QZ' against official Nexperia documentation to confirm the exact tape-and-reel packaging configuration and moisture sensitivity level. Ensure the ordering part number matches the required gain binning and package variant to avoid discrepancies in automated placement or electrical performance specifications.
Select this component when a small form factor NPN transistor is required alongside higher current handling than standard SOT-23 devices. The DFN1110D-3 package offers improved thermal dissipation compared to traditional plastic packages. Verify that the 45 V voltage rating aligns with the target circuit's supply rails and transient conditions.
This component belongs to the BC847 series of general-purpose NPN transistors from Nexperia. The series is widely utilized in consumer electronics and industrial equipment due to its balance of performance and cost. The BC847AQCZ specifically denotes the A-gain binning variant housed in the advanced DFN1110D-3 leadless package.
Direct pin-compatible replacements may include other BC847 variants in DFN1110D-3 packages, such as BC847BQCZ or BC847CQCZ, provided the gain requirements are met. Cross-reference datasheets to ensure voltage and current ratings match the original design constraints.