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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-523
- Supplier Device Package：SOT-523
- Grade：-
- Qualification：-
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Overview
The BC847AT-7-F is a small signal NPN transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features an epitaxial planar die construction and supports a collector current of 100 mA with a collector-emitter breakdown voltage exceeding 45 V. The device offers a DC current gain (hFE) ranging from 110 to 290 under standard test conditions. Electrical characteristics include a collector-base breakdown voltage of 50 V, a transition frequency of 100 MHz, and a power dissipation rating of 150 mW at 25°C ambient temperature.
Feature Summary
- Utilizes ultra-small SOT523 surface-mount packaging for compact circuit integration.
- Constructed with epitaxial planar die technology for reliable performance.
- Compliant with RoHS directives and free from halogen and antimony.
- Features matte tin plated leads ensuring solderability per MIL-STD-208.
Applications
- General purpose switching applications
- Low level amplifier circuits
- Surface mounting circuits
Procurement Notes
Verify the specific suffix 'A' within the part number to confirm the required DC current gain range, as this variant differs from other gain classifications within the same product family. Confirm that the SOT523 package dimensions align with the target PCB footprint layout. Ensure compliance with environmental regulations such as RoHS 3 and REACH requirements relevant to the destination market before finalizing procurement orders.
Selection Notes
Select this component when a miniature form factor is required alongside standard NPN switching capabilities. The BC847AT-7-F provides a balance of moderate current handling and low power dissipation suitable for portable electronics. Consider the complementary PNP type MMBT3906T if a matched pair configuration is necessary for push-pull stages or differential amplifiers within the design constraints.
Part Context
This component belongs to the BC847 series of general-purpose NPN transistors produced by Diodes Incorporated. The series is widely utilized in consumer electronics and industrial control systems requiring small signal amplification. The BC847AT variant specifically targets applications needing the lower end of the hFE spectrum compared to BT or CT grades, offering consistent performance across varying operating temperatures.
Replacement Considerations
BC847BT-7-F
FAQ
What is the maximum collector-emitter voltage for the BC847AT-7-F?
The maximum collector-emitter voltage (VCEO) is rated at 45 V.
Does the BC847AT-7-F support automotive applications directly?
No, the standard BC847AT-7-F is not automotive-compliant; an automotive-compliant version is available under the separate part number BC847BTQ.
What is the ESD protection rating for this device?
The device has an Electrostatic Discharge Human Body Model (HBM) rating of 4,000 V according to JEDEC Class 3A.
