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The onsemi BC847AWT1 is an NPN silicon general-purpose transistor housed in the SC-70 (SOT-323) surface-mount package. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device offers a minimum DC current gain of 110 at IC = 10 mA and VCE = 5 V, with a transition frequency of 100 MHz. Total device dissipation is rated at 200 mW on an FR-5 board at 25°C ambient temperature.
Verify the specific ordering suffix to confirm shipping quantity and tape-and-reel specifications. Confirm that the component meets required automotive site control change requirements if applicable, noting that S and NSV prefixes indicate AEC-Q101 qualification and PPAP capability. Ensure the marking code matches the ordered variant.
Select this component when a small form factor NPN transistor is required for low-power signal amplification. The BC847 series provides a 45 V collector-emitter breakdown voltage, distinguishing it from the lower-voltage BC848 and higher-voltage BC846 variants. Choose based on the required DC current gain bin (A, B, or C) to match circuit sensitivity and noise performance needs.
This part belongs to the BC846/BC847/BC848 family of general-purpose NPN transistors manufactured by onsemi. These devices share identical physical packaging and pinout configurations but differ in their voltage ratings and gain characteristics. The BC847 specifically targets applications requiring moderate voltage handling capabilities within a miniature surface-mount footprint.
Direct functional substitutes include the BC846AWT1 and BC848AWT1 from the same manufacturer, provided voltage ratings align with circuit requirements. Other manufacturers produce equivalent SC-70 NPN transistors, though electrical parameters such as hFE bins and breakdown voltages must be verified against the original datasheet specifications.