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The MDD BC847B is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It utilizes silicon technology and is housed in a SOT-23-3 package. The device supports a maximum DC collector current of 100 mA and withstands a collector-emitter voltage (VCEO) of 45 V. Key electrical characteristics include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 6 V, and a power dissipation rating of 200 mW. The transition frequency (fT) is specified at 100 MHz, with a typical collector-emitter saturation voltage of 500 mV.
Verify the specific manufacturer datasheet for the MDD BC847B to confirm exact gain groupings and thermal resistance values. Ensure compatibility with standard SOT-23 footprints during PCB design. Cross-reference RoHS compliance status directly with the supplier's documentation prior to procurement.
Select this component when a standard NPN transistor with 45 V breakdown and 100 mA current capacity is required in a compact surface-mount package. Consider the 200 mW power dissipation limit and 100 MHz transition frequency for high-speed or low-power signal handling requirements.
This component belongs to the BC84 series of small-signal NPN transistors. These devices are widely used in consumer electronics and industrial equipment due to their reliability and standardized pinout configurations. The BC847B variant specifically offers a defined current gain range suitable for consistent circuit performance.
Compatible substitutes include BC847B from other manufacturers such as Nexperia, Diotec, or Comchip Technology, provided they share the SOT-23-3 package and identical electrical ratings.