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The BC847B-B5003 is a single NPN silicon general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 45V and a continuous collector current rating of 100mA. The device offers a transition frequency of 250MHz and a maximum power dissipation of 330mW. It is housed in a surface-mount PG-SOT23-3 package with a thermal resistance suitable for compact designs. The component operates within a temperature range of -65°C to +150°C junction temperature.
Verify the obsolete status of this specific part number before procurement planning. Confirm availability of parametric equivalents or updated series replacements from Infineon. Ensure that substitute components match the required electrical parameters, including voltage ratings, current limits, and package dimensions, to maintain circuit integrity during design updates.
Select this component for applications requiring standard NPN amplification with moderate power handling. Consider the SOT-23 footprint for space-constrained PCB layouts. Evaluate thermal management requirements given the 330mW dissipation limit. Verify compatibility with existing biasing networks due to the specified gain ranges and saturation characteristics.
This part belongs to the BC847 family of NPN silicon transistors. It is distinct from dual configurations like the BC847SH series. The B5003 suffix typically denotes specific binning or packaging variations within the broader BC847B product line, focusing on general-purpose utility rather than specialized RF performance.
BC850BE6327HTSA1 is listed as a parametric equivalent substitute.