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The BC847BPDXV6T1G is a dual NPN bipolar junction transistor array manufactured by onsemi. It integrates two independent NPN transistors within a compact SOT-563 surface-mount package, designed for general-purpose amplification and switching applications. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Key electrical characteristics include a transition frequency of 100MHz and a DC current gain (hFE) minimum of 420 at 2mA and 5V. The component is qualified to AEC-Q101 standards for automotive reliability and operates across a junction temperature range of -55°C to 150°C.
Verify the specific suffix 'PD' against the official onsemi datasheet to confirm pinout compatibility and internal connection topology. Ensure the ordering part number matches the exact tape-and-reel quantity required for production. Confirm RoHS compliance status and material declaration documentation prior to final procurement approval.
Select this component when a dual NPN solution is required in an SOT-563 footprint. Compare hFE bins and saturation voltage specifications against circuit requirements. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability standards over standard commercial grade alternatives.
This part belongs to the BC847 series of small-signal NPN transistors produced by onsemi. It serves as a dual-transistor variant of the single BC847B, offering integrated functionality in a reduced footprint. The series is widely used in portable devices and industrial controls where space efficiency and moderate power handling are critical design constraints.
Direct substitutes include other dual NPN arrays in SOT-563 packages such as the BC847CDXV6T1G. Verify pin-to-pin compatibility and ensure equivalent electrical parameters like Vceo and Ic ratings match the original design requirements before substitution.