BC847BPDXV6T1G

BC847BPDXV6T1G

$0.36
  • Description:TRANS NPN/PNP 45V 100MA SOT-563
  • Series:-

SKU:ac4dda6e89cb Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 45V 100MA SOT-563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:357mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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BC847BPDXV6T1G

Overview

The BC847BPDXV6T1G is a dual NPN bipolar junction transistor array manufactured by onsemi. It integrates two independent NPN transistors within a compact SOT-563 surface-mount package, designed for general-purpose amplification and switching applications. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Key electrical characteristics include a transition frequency of 100MHz and a DC current gain (hFE) minimum of 420 at 2mA and 5V. The component is qualified to AEC-Q101 standards for automotive reliability and operates across a junction temperature range of -55°C to 150°C.

Feature Summary

  • Dual NPN configuration in a single SOT-563 package for space-constrained designs
  • Automotive-grade qualification ensuring high reliability under varying thermal conditions
  • High DC current gain suitable for sensitive signal amplification tasks

Applications

  • General-purpose switching circuits in consumer electronics
  • Signal amplification stages in audio or RF front-ends
  • Logic level translation and buffer interfaces in embedded systems

Procurement Notes

Verify the specific suffix 'PD' against the official onsemi datasheet to confirm pinout compatibility and internal connection topology. Ensure the ordering part number matches the exact tape-and-reel quantity required for production. Confirm RoHS compliance status and material declaration documentation prior to final procurement approval.

Selection Notes

Select this component when a dual NPN solution is required in an SOT-563 footprint. Compare hFE bins and saturation voltage specifications against circuit requirements. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability standards over standard commercial grade alternatives.

Part Context

This part belongs to the BC847 series of small-signal NPN transistors produced by onsemi. It serves as a dual-transistor variant of the single BC847B, offering integrated functionality in a reduced footprint. The series is widely used in portable devices and industrial controls where space efficiency and moderate power handling are critical design constraints.

Replacement Considerations

Direct substitutes include other dual NPN arrays in SOT-563 packages such as the BC847CDXV6T1G. Verify pin-to-pin compatibility and ensure equivalent electrical parameters like Vceo and Ic ratings match the original design requirements before substitution.

BC847BPDXV6T1GBC847BPDXV6T1G
$0.36
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