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The BC847BPN/DG/B2,115 is a dual NPN/PNP general-purpose transistor manufactured by Nexperia. It integrates complementary transistors in a UMT6 (SOT363) surface-mount package with six pins. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a maximum DC collector current (Idc) of 100 mA and has a power dissipation (Pd) rating of 200 mW. The minimum DC current gain (hFE) is specified at 200. Operating temperatures range from -65°C to +150°C, with a transition frequency (ft) of 100 MHz.
Verify the specific suffix /DG/B2 against official Nexperia documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure the ordering code matches the exact pinout and electrical grade defined in the datasheet before finalizing procurement orders.
Select this component when a compact dual transistor solution is required for signal processing or switching tasks. The UMT6 package offers a small footprint suitable for dense PCB layouts. Verify that the 45 V voltage rating and 100 mA current capacity meet the specific circuit demands.
This part belongs to the BC847 series of general-purpose bipolar junction transistors. The 'PN' designation indicates a complementary NPN/PNP pair within a single package. The BC847 family is widely used in consumer electronics and industrial equipment for low-power signal handling.
Direct substitutes include BC847BPN,115 and BC847BPN,135 from Nexperia. Other manufacturers may offer equivalent SOT-363 dual transistors, but pin compatibility and hFE binning must be verified.