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The BC847BPN-QF is a dual bipolar junction transistor (BJT) from Nexperia, integrating one NPN and one PNP transistor within a single SOT363-3 (SC-88) surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous DC collector current (IC) of 100 mA. The device exhibits a minimum DC current gain (hFE) of 200 at IC=2 mA and VCE=5 V, with a transition frequency (fT) of 100 MHz. Total power dissipation is rated at 200 mW, operating across a temperature range of -65°C to +150°C. This component is qualified under the AEC-Q101 standard for automotive reliability.
Verify the specific suffix 'QF' against official Nexperia documentation to confirm tape-and-reel packaging details. Ensure the selected distributor provides traceable supply chain data compliant with automotive quality standards. Confirm RoHS compliance status directly through manufacturer datasheets prior to final procurement decisions.
Select this component when space-constrained designs require complementary NPN/PNP pairs without mutual interference. The SOT363-3 package offers reduced board area compared to discrete solutions. Verify that the 45 V voltage rating and 100 mA current limits align with the target circuit requirements before integration into the schematic.
This part belongs to the BC847 series of general-purpose small-signal transistors. The 'PN' designation indicates a complementary NPN/PNP pair configuration. The '-Q' suffix denotes qualification according to AEC-Q101 standards, ensuring suitability for demanding automotive environments where high reliability and thermal stability are critical design parameters.
Direct substitutes include BC847BPN,115 or BC847BPN,165. Verify pinout compatibility and electrical parameter tolerances before substitution. Alternative packages such as SOT-363 variants may require mechanical re-evaluation.