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The BC847BPN-QH is a dual bipolar junction transistor (BJT) manufactured by Nexperia, featuring an integrated NPN and PNP pair within a single SOT-363 (SC-88) surface-mount package. This component is qualified to AEC-Q101 standards for automotive applications, ensuring reliability under stringent conditions. It supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor. The device offers a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, with a transition frequency (fT) of 100 MHz. Operating temperatures range from -55°C to +150°C, and total power dissipation is rated at 200 mW.
Verify the specific suffix designation during procurement to ensure correct binning and electrical parameter alignment. Confirm that the ordered part matches the required AEC-Q101 qualification status if used in automotive designs. Cross-reference the manufacturer's latest datasheet for any updates on pinout configurations or thermal limitations before finalizing supply chain agreements.
Select this component when space-constrained designs require complementary NPN/PNP pairs without increasing board area. Ensure the application voltage does not exceed the 45 V limit and that thermal management accommodates the 200 mW dissipation rating. Verify that the hFE binning meets the specific gain requirements of the target circuit design.
This part belongs to the BC847 series of general-purpose small-signal transistors. The 'PN' suffix indicates the dual NPN/PNP configuration, while '-QH' denotes the specific automotive qualification and packaging variant. It serves as a compact alternative to discrete transistor pairs in modern miniaturized electronics.
Direct replacements include other AEC-Q101 qualified dual transistors in SOT-363 packages, such as the BC857BPN-QH (complementary polarity) or equivalent parts from other manufacturers like ON Semiconductor or Diodes Inc., provided pinouts and electrical ratings are identical.
The maximum junction temperature for this component is specified as 150°C, allowing operation in high-temperature automotive environments.
Yes, it is qualified according to the AEC-Q101 standard, which defines stress test conditions for automotive-grade discrete semiconductors.
The minimum DC current gain is 200, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.