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The BC847BPN,125 is a general-purpose NPN/PNP transistor pair housed in the SOT363-3 (TSSOP6) surface-mounted plastic package. It provides closely matched current gain with hFE ranging from 200 to 450 at IC = 2 mA and VCE = 5 V. The device supports a maximum collector current of 100 mA per transistor and a total power dissipation of 300 mW at Tamb ≤ 25 °C. Key electrical limits include a collector-emitter voltage (VCEO) of 45 V, collector-base voltage (VCBO) of 50 V, and emitter-base voltage (VEBO) of 5 V. The transition frequency (fT) reaches 100 MHz.
Verify the ordering suffix matches the required packaging format before purchase. Confirm that the component meets RoHS compliance standards if applicable to your manufacturing process. Ensure the supplier provides valid traceability documentation for quality assurance purposes during the procurement phase.
Select this component when board space reduction is critical due to its ultra-small SOT363-3 package. Choose this part for applications requiring closely matched NPN and PNP characteristics within a single footprint. Verify thermal management requirements against the specified junction-to-ambient resistance values for your specific PCB layout.
This component belongs to the Nexperia BC847 series of general-purpose bipolar junction transistors. It serves as a compact dual-transistor solution replacing discrete components. The SOT363-3 package allows for reduced pick-and-place costs and minimized board area compared to standard single-transistor packages.
Direct substitutes include other BC847BPN variants with different ordering suffixes such as BC847BPN,115 or BC847BPN,165, which share identical electrical specifications but may differ in reel packaging quantities.