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The BC847BPN,135 is a general-purpose NPN/PNP transistor pair housed in the SOT363-3 (SC-88) surface-mounted plastic package. It provides closely matched current gain with hFE ranging from 200 to 450 at IC = 2 mA and VCE = 5 V. The device supports a maximum collector current of 100 mA per transistor and a total power dissipation of 300 mW at Tamb ≤ 25 °C. Key electrical limits include a collector-emitter voltage (VCEO) of 45 V, collector-base voltage (VCBO) of 50 V, and emitter-base voltage (VEBO) of 5 V. The transition frequency (fT) reaches 100 MHz.
Verify the ordering suffix against official Nexperia documentation to confirm packaging specifications. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement plans.
Select this component when board space reduction is required compared to discrete SC-75 or SC-89 packages. Ensure the design accommodates the 45 V collector-emitter voltage limit and verify thermal management for the 300 mW total power dissipation rating under expected operating conditions.
This part belongs to the BC847 series of general-purpose transistors manufactured by Nexperia. It serves as a compact dual-transistor solution replacing two separate single transistors, utilizing the TSSOP6 package format for efficient surface-mount assembly.
BC847BPN,115
The marking code is '13' followed by a placeholder character representing the manufacturing site code.
The DC current gain (hFE) ranges from a minimum of 200 to a maximum of 450, measured at IC = 2 mA and VCE = 5 V.
The peak collector current (ICM) is 200 mA, and the peak base current (IBM) is 200 mA for single pulses with a duration of tp ≤ 1 ms.