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The BC847BS-13P is a dual NPN bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-363-6 surface-mount package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter voltage (VCEO) of 45 V, with a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 6 V. Key electrical characteristics include a collector-emitter saturation voltage of 650 mV, power dissipation of 300 mW, and a gain-bandwidth product (fT) of 200 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS requirements if applicable to your design constraints. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.
Select this component when a matched pair of NPN transistors is required in a small form factor. The SOT-363-6 package offers space efficiency compared to discrete single transistors. Consider the 200 MHz gain-bandwidth product for high-frequency signal processing needs where low saturation voltage is beneficial for switching efficiency.
This part belongs to the BC847 series of general-purpose NPN transistors. While the BC847B, C, and D variants differ primarily in hFE gain ranges, the BS variant specifically integrates two NPN transistors in a single six-pin package. This configuration is distinct from the single-transistor BC847BW or BC847CW models.
Compatible substitutes include the BC847BS-TP from MCC and equivalent dual NPN devices from other manufacturers such as Diodes Incorporated or NXP Semiconductors, provided the SOT-363-6 package and electrical ratings match.