SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847BS-7-F is a dual NPN small signal transistor manufactured by Diodes Incorporated. It integrates two independent NPN transistors within an ultra-small SOT-363 surface mount package, designed for automated insertion processes. The device supports a maximum collector current of 100 mA and offers a collector-emitter breakdown voltage (VCEO) of 45 V. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 640 depending on the specific grade, a transition frequency (fT) of 100 MHz, and a power dissipation rating of 250 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific hFE binning suffix if precise gain ranges are required, as the base part number covers multiple gain grades. Confirm that the SOT-363 footprint matches the target PCB layout constraints. Ensure compliance with AEC-Q101 requirements if the application demands automotive-grade reliability standards.
Select this component when space constraints necessitate a dual transistor solution in a surface-mount format. Compare against single-transistor alternatives like the BC847BT-7-F if only one channel is needed. Consider the 100 mA current limit and 45 V voltage rating to ensure adequate headroom for the intended circuit design.
This part belongs to the BC847 series of small signal transistors from Diodes Incorporated. It serves as a dual-channel variant, offering two NPN transistors in a single package compared to the single-transistor BC847B or BC847C models. The 'BS' designation typically indicates the dual NPN configuration in the SOT-363 housing.
Direct pin-compatible substitutes include BCM847BS from Diotec Semiconductor. Other dual NPN transistors in SOT-363 packages may require schematic verification for gain and voltage compatibility.