SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847BS/DG/B2,115 is a dual NPN general-purpose transistor manufactured by Nexperia. It consists of two independent NPN transistors housed in a SOT363 (SC-88) surface-mount plastic package. The device supports a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a total power dissipation (Pd) of 300 mW. The component features a minimum DC current gain (hFE) of 200 at IC = 2 mA and VC = 5 V, with a transition frequency (fT) of 100 MHz. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix 'DG/B2' against official Nexperia documentation to confirm tape-and-reel specifications and marking codes. Ensure compatibility with standard SC-88 footprint designs during procurement planning.
Select this component when a compact dual NPN solution is required for signal processing or switching tasks. Compare hFE binning requirements and thermal constraints against alternative packages like SOT23-6 if higher power dissipation is needed.
This part belongs to the BC847 series of general-purpose transistors. It serves as the NPN counterpart to the BC857BS PNP/PNP pair. The BC847BS variant provides a space-saving alternative to discrete single transistors in portable electronics.
Direct substitutes include BC847BS,115 and BC847BS,135 from Nexperia. Verify pinout compatibility and electrical ratings before replacing with generic equivalents.