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The BC847BSQ-7-F is a dual NPN small-signal surface-mount transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of 45 V and a collector-base breakdown voltage (BVCBO) of 50 V. The device supports a continuous collector current (IC) of 100 mA with a peak pulse collector current (ICM) of 200 mA. Power dissipation is rated at 200 mW, resulting in a thermal resistance from junction to ambient of 625 °C/W. The DC current gain (hFE) ranges from 200 to 450 under standard test conditions. The transition frequency (fT) is specified at 100 MHz. The component is housed in an SOT363 package.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and compliance status. Ensure that the procurement channel is authorized to maintain warranty validity and product authenticity. Cross-reference the date code marking with the manufacturer's key to validate production timelines. Confirm that the delivered components match the exact part number specifications required for the design.
Select this component when a dual NPN configuration is required within a compact SOT363 footprint. The device is appropriate for designs necessitating AEC-Q101 qualification and automotive-grade manufacturing controls. Evaluate the 200 mW power dissipation limit and 625 °C/W thermal resistance against the expected operating temperature range and PCB copper coverage to ensure safe operation under steady-state conditions.
This component belongs to the BC847BSQ series of dual NPN transistors produced by Diodes Incorporated. It utilizes the SOT363 surface-mount package and is designed for automated insertion processes. The series is characterized by its suitability for general-purpose switching and amplification tasks while meeting stringent automotive quality standards.
Direct substitutes include other AEC-Q101 qualified dual NPN transistors in the SOT363 package, such as the BC847BS variants from Nexperia or Panjit. Verify that replacement parts meet the identical 45 V BVCEO rating, 100 mA IC limit, and hFE range before implementation.