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The BC847BV,115 is an NPN general-purpose double transistor manufactured by Nexperia USA Inc. It integrates two NPN transistors in a compact SOT666 plastic package with flat leads. The device supports a collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor. DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA and VCE = 5 V. Total power dissipation is rated at 300 mW for the dual device and 200 mW per transistor at Tamb ≤ 25 °C. Transition frequency is minimum 100 MHz.
Verify the ordering suffix matches the required packaging configuration before purchase. Confirm that the component status aligns with current production availability. Ensure the selected variant meets specific thermal and electrical requirements for the target application environment.
Select this component when space constraints require a dual NPN configuration in an ultra-small footprint. The SOT666 package offers superior thermal characteristics due to flat leads. Verify that the 45 V collector-emitter voltage rating satisfies the maximum operating voltage of the intended circuit design.
The BC847BV belongs to the BC847 series of NPN general-purpose transistors. It serves as the dual-transistor counterpart to single units like the BC847B. The PNP complement for this device is the BC857BV. The '115' suffix indicates the specific tape and reel packaging format provided by Nexperia.
BC857BV is the PNP complement. PEMD30 is listed as a cost-saving alternative for BC847BVN.