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The BC847BW-7-F is an NPN small signal transistor manufactured by Diodes Incorporated, housed in a SOT323 surface-mount package. It features a collector-emitter breakdown voltage of 45 V and a continuous collector current rating of 100 mA. The device belongs to the 'B' gain band, providing a minimum DC current gain (hFE) of 200 at IC = 2.0 mA and VCE = 5.0 V. Electrical characteristics include a transition frequency of 100 MHz and a power dissipation capacity of 200 mW.
Verify that the ordering suffix '-7-F' corresponds to the specific 3000-unit reel packing quantity and K1R marking code as defined in the official Diodes Incorporated documentation. Confirm compliance requirements against EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the application environment remains within the specified operating temperature range of -65°C to +150°C.
Select this component when a 45 V collector-emitter voltage rating is required alongside a high minimum DC current gain of 200. The SOT323 package offers a compact footprint suitable for space-constrained designs. Verify that the 100 mA continuous collector current meets the load requirements and that the thermal resistance values are sufficient for the intended ambient conditions.
This part belongs to the BC846AW–BC848CW series of NPN small signal transistors produced by Diodes Incorporated. The series utilizes an epitaxial silicon planar design optimized for general-purpose applications. The BC847 variant specifically provides a 45 V breakdown voltage, distinguishing it from the 65 V BC846 and 30 V BC848 counterparts within the same family.
Diodes Incorporated lists the BC857BW-7-F as the complementary PNP type. Cross-referencing with other manufacturers requires verifying identical pinout configurations, voltage ratings, and gain bands.