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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC847BWQ-13-F is a single NPN bipolar junction transistor manufactured by Diodes Incorporated. It utilizes epitaxial silicon construction and is housed in an SOT-323 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V, a maximum collector-base voltage (VCBO) of 50 V, and a maximum emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 200 mW. The transition frequency (fT) is specified at 100 MHz, and the DC current gain (hFE) minimum is 200 at 2 mA and 5 V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Single NPN configuration within an ultra-small surface-mount package
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device design
Applications
- General purpose switching applications
- Small signal amplification circuits
- Automotive electronics requiring AEC-Q101 qualified components
Procurement Notes
Verify the specific suffix Q-13-F against official Diodes Incorporated documentation to confirm tape and reel packaging specifications. Ensure the component meets required automotive reliability standards if used in such environments. Cross-reference datasheet revisions for any changes in mechanical dimensions or electrical limits prior to final procurement.
Selection Notes
Select this component when a compact NPN transistor with 45 V breakdown and 100 mA current capability is required in an SOT-323 footprint. Consider the 200 mW power dissipation limit and 100 MHz frequency response for high-speed switching or linear amplification tasks. Verify thermal management requirements for the specific PCB layout.
Part Context
This part belongs to the BC847 series of small-signal transistors. It serves as a general-purpose alternative to other SOT-323 NPN devices. The BC847 family offers various gain ranges and complementary PNP options. This specific variant provides standardized performance for mass production in consumer and industrial electronics.
Replacement Considerations
BC847BW,115
FAQ
What is the maximum power dissipation for the BC847BWQ-13-F?
The maximum power dissipation is 200 mW.
Is the BC847BWQ-13-F suitable for automotive applications?
Yes, it is qualified to AEC-Q101 standards for high reliability.
What is the transition frequency of this transistor?
The transition frequency (fT) is 100 MHz.
