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The BC847C is a small-signal NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It utilizes silicon epitaxial planar technology and is housed in the SOT-23 surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical parameters include a DC current gain (hFE) ranging from 420 to 800 at specified test conditions, a transition frequency of 100 MHz, and a power dissipation rating of 250 mW.
Verify the specific manufacturer designation on the component marking or datasheet header, as the BC847C part number is widely used by multiple semiconductor vendors including Nexperia, Diotec, and onsemi. Confirm that the supplier explicitly lists Taiwan Semiconductor Corporation as the originator to ensure compliance with specific quality standards and traceability requirements.
Select this component when a general-purpose NPN transistor with moderate current handling and high gain is required in a compact surface-mount form factor. Ensure the application voltage does not exceed the 45 V collector-emitter limit and that thermal management accommodates the 250 mW power dissipation capability in the SOT-23 package.
This component belongs to the BC847 series of small-signal transistors, which are industry-standard replacements for older through-hole devices like the 2N3904 in space-constrained designs. The 'C' suffix specifically denotes the binning of the DC current gain characteristics, distinguishing it from the A and B variants which offer lower gain ranges.
Direct pin-compatible substitutes include the BC847C from Nexperia, Diotec Semiconductor, and onsemi. Verify that the alternative source maintains the same hFE binning and thermal resistance specifications to ensure circuit performance parity.