BC847C-C

BC847C-C

$0.09
  • Description:TRANS NPN 50V 0.1A SOT23-3
  • Series:-

SKU:1ae0ee5e1356 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS NPN 50V 0.1A SOT23-3
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:200 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BC847C-C

Overview

The BC847C-C is an NPN small-signal bipolar junction transistor manufactured by Diotec Semiconductor. It utilizes a SOT-23 surface-mount package and operates with a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device features three distinct DC current gain groups (A, B, C), with the 'C' suffix indicating a minimum hFE of 420 at IC = 2 mA. Commercial grade variants are rated for 200 mW power dissipation, while industrial grades support up to 300 mW. The component includes copper bond wires and complies with RoHS standards.

Feature Summary

  • Utilizes copper bond wires for commercial grade construction
  • Offers three standardized current gain groups for precise amplification control
  • Designed for general-purpose signal processing and switching applications

Applications

  • Signal processing circuits
  • Electronic switching applications
  • General-purpose amplification stages

Procurement Notes

Verify that the specific ordering code matches the required performance grade. Confirm whether the application requires the commercial grade (-C) or industrial/AEC-Q101 compliant versions, as these differ in power dissipation ratings and internal wire materials. Ensure compliance with REACH regulations and conflict mineral declarations during procurement validation.

Selection Notes

Select the BC847C-C when a high-gain NPN transistor is required within a compact SOT-23 footprint. The -C suffix specifically denotes the highest gain group (hFE min 420). Consider the lower thermal resistance of industrial grades if higher power dissipation near 300 mW is necessary, noting that commercial grades are limited to 200 mW.

Part Context

This component belongs to the BC846 through BC850 series of SMD general-purpose NPN transistors. These devices share similar electrical characteristics but vary in maximum voltage ratings depending on the specific model number within the family. The BC847 variant specifically provides a 45 V collector-emitter breakdown voltage.

Replacement Considerations

BC847C

FAQ

What distinguishes the BC847C-C from other gain groups?

The 'C' suffix indicates the highest current gain group, requiring a minimum DC current gain (hFE) of 420 at IC = 2 mA and VCE = 5 V.

How does the commercial grade affect power dissipation?

Commercial grade (-C) devices have a reduced power dissipation rating of 200 mW compared to industrial grades, which support up to 300 mW.

What type of bond wires are used in this component?

The BC847C-C uses copper (Cu) bond wires, whereas other non-C grades utilize gold (Au) bond wires.

BC847C-CBC847C-C
$0.09
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