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The BC847C-C is an NPN small-signal bipolar junction transistor manufactured by Diotec Semiconductor. It utilizes a SOT-23 surface-mount package and operates with a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device features three distinct DC current gain groups (A, B, C), with the 'C' suffix indicating a minimum hFE of 420 at IC = 2 mA. Commercial grade variants are rated for 200 mW power dissipation, while industrial grades support up to 300 mW. The component includes copper bond wires and complies with RoHS standards.
Verify that the specific ordering code matches the required performance grade. Confirm whether the application requires the commercial grade (-C) or industrial/AEC-Q101 compliant versions, as these differ in power dissipation ratings and internal wire materials. Ensure compliance with REACH regulations and conflict mineral declarations during procurement validation.
Select the BC847C-C when a high-gain NPN transistor is required within a compact SOT-23 footprint. The -C suffix specifically denotes the highest gain group (hFE min 420). Consider the lower thermal resistance of industrial grades if higher power dissipation near 300 mW is necessary, noting that commercial grades are limited to 200 mW.
This component belongs to the BC846 through BC850 series of SMD general-purpose NPN transistors. These devices share similar electrical characteristics but vary in maximum voltage ratings depending on the specific model number within the family. The BC847 variant specifically provides a 45 V collector-emitter breakdown voltage.
BC847C
The 'C' suffix indicates the highest current gain group, requiring a minimum DC current gain (hFE) of 420 at IC = 2 mA and VCE = 5 V.
Commercial grade (-C) devices have a reduced power dissipation rating of 200 mW compared to industrial grades, which support up to 300 mW.
The BC847C-C uses copper (Cu) bond wires, whereas other non-C grades utilize gold (Au) bond wires.