BC847CB5000

Overview

The BC847CB5000 is a silicon NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and configured as a single device. The component supports a maximum continuous collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 45 V, with a collector-base voltage (VCBO) rating of 50 V. The emitter-base reverse voltage (VEBO) is specified at 6 V. Electrical performance includes a transition frequency (fT) of 250 MHz and a DC current gain (hFE) range of 200 to 450. Power dissipation is rated at 250 mW, and the device operates within a temperature range of -65°C to +150°C.

Feature Summary

• High-frequency operation capability defined by a 250 MHz transition frequency for signal amplification.
• Wide DC current gain range from 200 to 450 ensuring consistent amplification characteristics.
• Robust thermal stability supporting a maximum junction temperature of 150°C.
• Automotive qualification compliant with AEC-Q100 standards for reliability.

Applications

• General-purpose signal amplification in electronic circuits.
• Switching applications requiring low power consumption.
• Automotive electronics systems meeting AEC-Q100 requirements.

Procurement Notes

Verify the specific suffix B5000 against official Infineon documentation to confirm packaging details and tape-and-reel specifications. Ensure the procurement channel provides valid traceability data. Confirm RoHS compliance status through the manufacturer's material content declaration. Validate that the delivered components match the exact part number to avoid functional mismatches in sensitive designs.

Selection Notes

Select this component when an NPN transistor with a 45 V collector-emitter voltage and 100 mA current capacity is required. The 250 MHz bandwidth makes it suitable for high-speed switching or amplification tasks. Consider the SOT-23-3 footprint for space-constrained PCB layouts. Verify that the hFE binning aligns with circuit gain requirements before finalizing the design.

Part Context

This component belongs to the BC847 series of general-purpose NPN transistors produced by Infineon Technologies. The series is widely utilized in consumer electronics and industrial control systems. The BC847C variant specifically denotes a tighter DC current gain tolerance compared to lower letter codes. The B5000 suffix typically indicates a specific packaging configuration, such as tape and reel, rather than a change in electrical function.

Replacement Considerations

• BC847B
• BC847BW

FAQ

What is the maximum collector-emitter voltage for the BC847CB5000?

The maximum collector-emitter voltage (VCEO) is 45 V.

Is the BC847CB5000 qualified for automotive applications?

Yes, the component is qualified according to the AEC-Q100 standard.

What is the transition frequency of this transistor?

The transition frequency (fT) is 250 MHz.