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The BC847CB5003 is an NPN bipolar junction transistor manufactured by Infineon Technologies, designed for surface-mount applications. It features a maximum collector-emitter voltage of 45 V and a collector-base voltage of 50 V. The device supports a continuous collector current of 100 mA with a peak current rating of 200 mA. Electrical characteristics include a DC current gain (hFE) range of 420 to 800 at IC=2mA. Transition frequency reaches 250 MHz, while power dissipation is rated at 250 mW. Operating temperatures span from -65°C to +150°C.
Verify the specific suffix B5003 against official Infineon documentation to confirm reel specifications and binning. Ensure compatibility with SMD assembly processes. Confirm RoHS compliance status through the manufacturer's material declaration. Validate that the component meets AEC-Q101 standards if required for automotive integration. Cross-reference datasheet revisions to ensure parameter consistency.
Select this component when high current gain is required for sensitive signal processing. The NPN configuration provides flexibility for common-emitter setups. Consider the small footprint for space-constrained designs. Evaluate thermal management requirements given the 250 mW dissipation limit. Compare hFE bins against circuit sensitivity needs to minimize variation impact.
This part belongs to the BC847 series of general-purpose NPN transistors. The series is widely used in portable devices due to its compact package and robust electrical characteristics. Infineon produces variants with different gain ranges to suit specific application requirements. The BC847CB variant specifically targets high-gain applications within this family.
Check for direct substitutes like BC847B or BC847C from other manufacturers, ensuring pinout and electrical limits match. Verify that alternative parts meet the same AEC-Q101 automotive qualification if applicable. Confirm identical package dimensions for PCB compatibility.