ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN DUAL 45V 100MA SOT-363
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The onsemi BC847CDW1T1 is a dual general-purpose NPN bipolar junction transistor housed in an SOT-363 surface-mount package. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device provides a DC current gain (hFE) ranging from 420 to 800 at IC = 2.0 mA and VCE = 5.0 V. Electrical characteristics include a collector-emitter saturation voltage of 0.6 V max at IC = 100 mA, and a transition frequency (fT) of 100 MHz. Thermal dissipation is rated at 380 mW total device power.
Feature Summary
- Dual NPN configuration within a compact SOT-363 footprint for low-power surface mount applications
- High DC current gain suitable for general-purpose amplifier circuits
- Lead-free, halogen-free, and RoHS compliant construction
Applications
- General purpose amplifier applications
- Low power surface mount circuit designs
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm that the component meets required automotive or industrial qualification standards if applicable. Ensure compatibility with standard surface mount assembly processes.
Selection Notes
Select this component when a dual NPN transistor with high current gain is required in a small outline package. Compare the 45 V collector-emitter rating against circuit requirements. Verify thermal management capabilities given the 380 mW power dissipation limit in the SOT-363 package.
Part Context
This part belongs to the BC847BDW1 series family, which includes variants with different gain ranges. The 'C' designation indicates a higher minimum hFE compared to the 'B' variant. It shares the same physical package and pinout as other members of the BC846/BC847/BC848 DW1 series.
Replacement Considerations
Check for direct equivalents such as BC847BDW1T1G or SBC847BDW1T1G. Verify that substitute parts match the 45 V VCEO rating and the specific hFE range required by the design.
