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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA SC88/SC70
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：380mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The onsemi BC847CDW1T1G is a dual NPN general-purpose transistor housed in the SOT-363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device provides a DC current gain range of 290 to 520 at IC = 2.0 mA, with a transition frequency of 100 MHz. Total power dissipation reaches 380 mW per device, supporting an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual NPN configuration within a compact SOT-363 package for low-power surface mount applications
- High DC current gain selection suitable for general-purpose amplifier circuits
- Qualified for automotive applications requiring unique site and control change requirements
Applications
- General-purpose switching and amplification
- Automotive electronic circuits requiring AEC-Q101 qualification
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and Pb-Free designation through manufacturer datasheets or authorized distributor specifications before finalizing procurement orders.
Selection Notes
Select this component when a dual NPN transistor with high gain (hFE 290–520) is required in a small footprint. Ensure the 45 V collector-emitter voltage rating meets circuit requirements. Verify thermal management capabilities given the 380 mW total device dissipation limit in the SOT-363 package.
Part Context
This part belongs to the BC847BDW1 series family, which also includes BC846BDW1 and BC848CDW1 variants. These devices share the same SOT-363 physical package and pinout but differ in voltage ratings and gain bands. The BC847CDW1T1G specifically offers the C gain band characteristics within this dual transistor lineup.
Replacement Considerations
BC847BDW1T1G
FAQ
What is the marking code for the BC847CDW1T1G?
The device marking code is '1G'.
Is the BC847CDW1T1G qualified for automotive applications?
Yes, versions with the S or NSV prefix are AEC-Q101 qualified and PPAP capable for automotive applications.
What is the maximum collector-base voltage for this device?
The maximum collector-base voltage (VCBO) is 50 V.
