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The onsemi BC847CDXV6T1G is a dual NPN bipolar junction transistor array housed in an SOT-563 surface-mount package. It features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA per element. The device offers a minimum DC current gain (hFE) of 420 at 2mA and 5V, with a transition frequency of 100MHz. Maximum power dissipation is rated at 500mW, and the junction temperature range spans from -55°C to 150°C.
Verify component authenticity through authorized distribution channels. Confirm lot traceability and packaging integrity upon receipt. Ensure storage conditions align with manufacturer specifications to maintain reliability. Cross-reference ordering codes with official datasheets to prevent substitution errors during assembly.
Select this component when a dual NPN topology is required in a minimal footprint. Compare hFE bins and VCEO ratings against circuit requirements. Evaluate thermal management needs given the 500mW dissipation limit. Consider pin compatibility with existing PCB layouts designed for SOT-563 or SOT-666 packages.
This part belongs to the BC847 series of general-purpose NPN transistors. It serves as a complementary counterpart to PNP arrays like the BC857. The SOT-563 package allows for high-density mounting compared to traditional discrete packages. It is widely used in consumer electronics and industrial control systems.
Direct substitutes include BC847CDXV6T1G equivalents from other manufacturers offering identical SOT-563 pinouts and electrical specs. Verify hFE ranges and VCEO limits match original design constraints before swapping.