BC847CDXV6T5

Overview

The onsemi BC847CDXV6T5 is a dual NPN bipolar junction transistor (BJT) array housed in an SOT-563 surface-mount package. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device provides a minimum DC current gain of 420 at 2 mA and 5 V, with a transition frequency of 100 MHz. Total power dissipation reaches 500 mW when both junctions are heated. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual NPN configuration within a compact SOT-563 surface-mount package for low-power applications
• High DC current gain suitable for general-purpose amplifier circuits
• Lead-free construction compliant with environmental standards

Applications

• General purpose amplifier applications
• Low power surface mount circuit designs

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantities and lead-free status. Confirm that the component matches the required electrical characteristics for the intended application before procurement.

Selection Notes

Select this component for designs requiring dual NPN transistors in a small footprint. Ensure the 45 V collector-emitter voltage and 100 mA current limits accommodate the circuit requirements. Verify thermal management capabilities for the SOT-563 package under expected operating conditions.

Part Context

This part belongs to the BC847 series of dual general-purpose NPN transistors manufactured by onsemi. It shares the same pinout and form factor as the BC848 variant but differs in maximum voltage ratings. The T5 suffix indicates tape and reel packaging containing 8000 units.

Replacement Considerations

BC847CDXV6T1G serves as a direct functional replacement with identical electrical specifications, differing only in the 4000-unit tape and reel packaging quantity.