SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847CDXV6T5G is a dual NPN general-purpose transistor manufactured by onsemi, housed in an SOT-563 surface-mount package. It features a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 100 mA. The device provides a DC current gain (hFE) ranging from 420 to 800 at a collector current of 2 mA and Vce of 5 V. With a transition frequency of 100 MHz and a power dissipation rating of 500 mW, it supports operation across a junction temperature range of -55°C to +150°C.
Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity. Confirm that the received parts match the SOT-563 package outline and pinout specifications defined in the official datasheet. Check for any physical damage or contamination before integration into the assembly process.
Select this component when a dual NPN topology is required in a minimal surface-mount package. Ensure the application voltage does not exceed the 30 V collector-emitter rating. Consider the 100 mA current limit and 500 mW power dissipation capabilities during thermal design calculations to maintain safe operating conditions.
This part belongs to the BC847/BC848/BC849 series of dual transistors offered by onsemi. These components are designed as complementary pairs or single-type duals for use in standard electronic circuits. The DXV6 suffix indicates the specific tape and reel packaging format used for automated surface-mount assembly.
Direct substitutes include other manufacturers' dual NPN transistors in the SOT-563 package with matching 30 V and 100 mA ratings. Verify electrical parameters such as hFE ranges and transition frequencies against the original specification sheet before substitution.