BC847CDXV6T5G

BC847CDXV6T5G

  • Description:TRANS 2NPN 45V 100MA SOT-563
  • Series:-

SKU:e02018abecaa Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN 45V 100MA SOT-563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:500mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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BC847CDXV6T5G

Overview

The BC847CDXV6T5G is a dual NPN general-purpose transistor manufactured by onsemi, housed in an SOT-563 surface-mount package. It features a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 100 mA. The device provides a DC current gain (hFE) ranging from 420 to 800 at a collector current of 2 mA and Vce of 5 V. With a transition frequency of 100 MHz and a power dissipation rating of 500 mW, it supports operation across a junction temperature range of -55°C to +150°C.

Feature Summary

  • Dual NPN configuration within a compact SOT-563 footprint for space-constrained designs
  • High DC current gain suitable for low-level signal amplification tasks
  • Wide operating temperature range ensuring reliability in varied thermal environments

Applications

  • General purpose switching and amplification circuits
  • Low-frequency signal processing stages
  • Battery-powered portable devices requiring small form factors

Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity. Confirm that the received parts match the SOT-563 package outline and pinout specifications defined in the official datasheet. Check for any physical damage or contamination before integration into the assembly process.

Selection Notes

Select this component when a dual NPN topology is required in a minimal surface-mount package. Ensure the application voltage does not exceed the 30 V collector-emitter rating. Consider the 100 mA current limit and 500 mW power dissipation capabilities during thermal design calculations to maintain safe operating conditions.

Part Context

This part belongs to the BC847/BC848/BC849 series of dual transistors offered by onsemi. These components are designed as complementary pairs or single-type duals for use in standard electronic circuits. The DXV6 suffix indicates the specific tape and reel packaging format used for automated surface-mount assembly.

Replacement Considerations

Direct substitutes include other manufacturers' dual NPN transistors in the SOT-563 package with matching 30 V and 100 mA ratings. Verify electrical parameters such as hFE ranges and transition frequencies against the original specification sheet before substitution.

BC847CDXV6T5GBC847CDXV6T5G

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