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The BC847CLT1 is an NPN silicon general-purpose transistor from the BC846ALT1 series, manufactured by onsemi. It operates within a collector-emitter voltage of 45 V and supports a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 420 at 2.0 mA and 5.0 V. Electrical characteristics include a transition frequency (fT) of 100 MHz and a maximum power dissipation of 225 mW on an FR-5 board. It functions reliably across a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm that the component meets RoHS compliance requirements if applicable to the design. Ensure the manufacturer source matches the specified part number to avoid counterfeit components. Cross-reference the date code and marking diagram with the datasheet to validate authenticity before integration.
Select this component when a high-gain NPN transistor is required for low-current signal processing. The BC847C variant provides superior current gain compared to A or B grades. Consider the thermal resistance and power dissipation limits relative to the PCB layout. Verify that the 45 V collector-emitter rating aligns with the circuit's maximum operating voltage constraints.
This component belongs to the BC846ALT1 series, which includes complementary PNP types like the BC857. The series is designated as a Preferred Device by onsemi, indicating recommended choices for future use. The device utilizes a SOT-23 surface-mount package, facilitating compact circuit designs in consumer and industrial electronics.
Compatible substitutes within the same series include BC847ALT1 and BC847BLT1. These variants share identical pinouts and physical dimensions but differ in DC current gain ranges. Verify electrical parameters match the specific application requirements before substitution.