ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 45V 0.1A DFN1412D-3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：-
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：360 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1412D-3
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The BC847CQCZ is a general-purpose NPN bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 45 V and a collector-base voltage of 50 V. The device supports a continuous DC collector current of 100 mA and features a minimum DC current gain (hFE) of 200 at 2 mA and 5 V. It is housed in a DFN1110D-3 surface-mount package, measuring 1.1 mm in height. The component has a maximum power dissipation of 250 mW and a transition frequency of 100 MHz. It functions within an operating temperature range from -65°C to +150°C.
Feature Summary
- General-purpose switching and amplification capabilities
- High DC current gain selection for consistent performance
- Compact leadless plastic package design
Applications
- General-purpose switching circuits
- Amplifier stages
- Signal conditioning
Procurement Notes
Verify the specific suffix QCZ against official Nexperia documentation to confirm the exact package variant and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment due to the small form factor. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN transistor with high current gain is required for space-constrained designs. The DFN1110D-3 package offers thermal efficiency suitable for low-power applications. Compare hFE ranges against circuit requirements to ensure adequate drive capability. Consider the 45 V rating for standard low-voltage logic interfacing tasks.
Part Context
This part belongs to the BC847 series of general-purpose NPN transistors. The series provides multiple gain grades to accommodate various amplifier and switching needs. Nexperia produces these devices using silicon technology optimized for surface-mount assembly. The BC847CQCZ represents a specific configuration within this widely used family of discrete semiconductors.
Replacement Considerations
Check for direct equivalents such as BC847CQ or other manufacturers' parts with identical pinouts and electrical ratings. Verify that substitute components match the DFN1110D-3 footprint and thermal characteristics. Ensure replacement parts maintain the same hFE binning if gain consistency is critical.
