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The BC847CWE6327BTSA1 is a small signal NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 0.1 A and a collector-emitter voltage rating of 45 V. The device is housed in a SOT-323 surface-mount package, designated as BTSA1. It provides a minimum DC current gain (hFE) of 400, suitable for general-purpose amplification and switching applications within an operating temperature range up to 150 °C.
Verify the manufacturer part number BC847CWE6327BTSA1 against official Infineon documentation to confirm the specific binning and packaging details. Ensure the ordering suffix matches the required tape-and-reel configuration. Cross-reference the datasheet for thermal characteristics and absolute maximum ratings before integration into the final design.
Select this component when a high-gain NPN transistor is required in a compact SOT-323 footprint. The BC847C variant offers superior current gain compared to lower beta variants like the BC847B. Confirm that the 45V voltage rating and 100mA current limit align with the circuit requirements.
This component belongs to the BC847 series of small signal transistors from Infineon. The 'C' suffix indicates a higher current gain binning (hFE min 400) compared to other series variants. The E6327 suffix typically denotes specific environmental or compliance attributes, while BTSA1 identifies the SOT-323 tape-and-reel packaging format.
Compatible substitutes include BC847CW115 and BC847CT3, which share the same electrical characteristics and SOT-323 package. Verify pinout compatibility and thermal performance before substitution.