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The BC847CWH6433XTMA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-323 (SC-70) package with three pins and physical dimensions of 2 x 1.25 x 0.8 mm. The device supports a maximum DC collector current of 100 mA and features a maximum collector-emitter voltage of 45 V, a collector-base voltage of 50 V, and an emitter-base voltage of 6 V. Key electrical characteristics include a maximum power dissipation of 330 mW, a transition frequency of 250 MHz, and a maximum operating temperature of +150 °C.
Verify the specific suffix WH6433XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and binning grades. Ensure compatibility with standard SOT-323 footprints during procurement planning. Cross-reference RoHS compliance status directly with the manufacturer's latest material content sheet prior to finalizing orders.
Select this component when a low-power NPN transistor with a 45 V collector-emitter voltage rating is required. The SOT-323 package offers space efficiency for dense layouts. Consider the 250 MHz transition frequency for moderate-speed switching or amplification tasks. Verify that the 100 mA continuous current limit meets the specific load requirements of the target application design.
This part belongs to the BC847 series of small-signal NPN transistors produced by Infineon Technologies. The series is widely utilized in consumer electronics and industrial control systems. The BC847C variant specifically denotes a defined DC current gain range, distinguishing it from other binning options within the same family line.
Consult official Infineon substitution guides for verified equivalents. Generic cross-references may not match the specific current gain binning or thermal characteristics of the BC847CWH6433XTMA1 variant.