BC847DS,115

Overview

The BC847DS,115 is a dual NPN bipolar junction transistor (BJT) manufactured by Nexperia. It utilizes the SOT-457 (SC-74) surface-mount package with six pins. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a maximum continuous DC collector current (IC) of 100 mA. Power dissipation (Pd) is rated at 380 mW. The minimum DC current gain (hFE) is specified as 200 at IC = 2 mA and VCE = 5 V. The transition frequency (fT) reaches 250 MHz. Operating temperatures range from -65°C to +150°C.

Feature Summary

• Dual NPN configuration within a compact SC-74 plastic surface-mount package.

Applications

• General-purpose switching applications
• Amplifier circuits requiring matched dual transistors

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and AEC-Q101 automotive qualification status via official datasheets. Ensure packaging specifications match production requirements. Validate part markings against official Nexperia documentation to prevent counterfeit risks.

Selection Notes

Select this component for designs requiring dual NPN transistors in small form factors. Compare power dissipation ratings and thermal characteristics against circuit demands. Verify hFE binning requirements for specific gain applications. Consider alternative packages if higher pin counts or different thermal profiles are needed.

Part Context

This part belongs to the BC847 series of general-purpose NPN transistors. It shares functional similarities with other dual configurations like the BCM847BS but differs in package type and specific electrical limits. The SOT-457 package offers space efficiency compared to larger discrete alternatives.

Replacement Considerations

BCM847DS,115 serves as a direct equivalent within the same series. Other dual NPN transistors in similar packages may require verification of pinout compatibility and electrical parameter alignment before substitution.