BC847PNE6327BTSA1

Overview

The BC847PNE6327BTSA1 is a dual NPN silicon bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is housed in a surface-mount SC-74-6 package, providing two independent NPN transistors within a compact footprint. The device supports a maximum DC collector current of 100 mA and features a collector-emitter voltage rating of 50 V. Key electrical characteristics include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 250 mW. The component operates reliably across a temperature range from -65°C to +150°C, with a transition frequency of 250 MHz.

Feature Summary

• Dual NPN configuration for space-efficient circuit integration
• High thermal stability supporting operation up to 150°C
• Compact SC-74-6 surface-mount packaging

Applications

• General-purpose signal switching
• Low-power amplification stages
• Logic level translation circuits

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm pinout compatibility and manufacturing lot details. Confirm RoHS compliance status through the manufacturer's datasheet before finalizing procurement specifications.

Selection Notes

Select this component when a dual NPN configuration is required in a small surface-mount form factor. Ensure the design accounts for the 250 mW power dissipation limit and verify that the 50 V collector-emitter voltage meets the circuit requirements.

Part Context

This part belongs to the BC847 series of general-purpose NPN transistors. The 'PN' designation indicates a dual configuration, while the 'E6327BTSA1' suffix specifies the tape-and-reel packaging format and regional compliance standards defined by Infineon.

Replacement Considerations

BC847DWE6327HTSA1