BC847PNH6727XTSA1

Overview

The BC847PNH6727XTSA1 is a dual NPN bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-363-6 package and utilizes silicon technology. The device features a maximum DC collector current of 200 mA and a continuous collector current of 100 mA. Key voltage ratings include a collector-emitter voltage (VCEO) of 50 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 6 V. The component operates within a temperature range of -65°C to +150°C, with a power dissipation rating of 250 mW.

Feature Summary

• Dual NPN configuration integrated into a compact SMD package for space-constrained designs.

Applications

• General-purpose signal amplification
• Switching applications in consumer electronics

Procurement Notes

Verify the specific suffix H6727XTSA1 against official Infineon documentation to confirm tape-and-reel packaging details and RoHS compliance status. Confirm availability as distribution listings may vary. Ensure the part number matches the exact manufacturer designation before procurement to avoid substitution errors.

Selection Notes

Select this component when a dual NPN BJT is required in a small outline transistor package. Verify that the 50 V collector-emitter voltage and 200 mA current limits meet circuit requirements. Consider the SOT-363-6 footprint compatibility during PCB layout design.

Part Context

This part belongs to the BC847 series of dual transistors from Infineon Technologies. It provides two independent NPN transistors in a single six-pin package, offering a compact solution for applications requiring multiple switching or amplification stages without increasing board space.

Replacement Considerations

Check for direct pin-compatible alternatives such as the BC847PS or BC847PT variants from other manufacturers. Verify electrical parameters including hFE ranges and voltage ratings before substituting.