SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847PNQ-7-F is a complementary pair small-signal transistor manufactured by Diodes Incorporated. It integrates two internally isolated transistors, an NPN (BC847B type) and a PNP (BC857B type), within a single SOT363 surface-mount package. The device is designed for automotive applications and meets AEC-Q101 standards. Key electrical parameters include a maximum collector current of 100 mA, a collector-emitter breakdown voltage of 45 V, and a total power dissipation of 200 mW. The DC current gain ranges from 200 to 450 for the NPN element and 220 to 475 for the PNP element.
Verify that the specific part number suffix matches the required packaging configuration, as standard reels contain 3,000 units. Confirm compliance with RoHS 3 directives and ensure the sourcing channel is authorized to guarantee AEC-Q101 qualification integrity. Cross-reference the date code marking against manufacturing timelines to validate component freshness.
Select this component when space-constrained designs require matched NPN/PNP pairs without mutual interference. The SOT363 package minimizes footprint compared to discrete solutions. Ensure the application operates within the specified -65°C to +150°C junction temperature range and respects the 200 mW total power dissipation limit under steady-state conditions.
This component belongs to the BC847PNQ series, which is specifically engineered to meet stringent automotive reliability requirements. Unlike standard commercial variants, the 'Q' designation indicates adherence to IATF 16949 certified manufacturing facilities and specific change control protocols mandated for automotive supply chains.
Direct functional substitutes include the BC847BPN-Q from Nexperia and the BC847PN from Diotec Semiconductor. Verify pinout compatibility and thermal resistance characteristics before substitution, as package dimensions and power dissipation limits may vary slightly between manufacturers.