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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA DFN1412-6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：480mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：DFN1412-6
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The BC847RAZ is a dual NPN bipolar junction transistor array manufactured by Nexperia USA Inc. It features a maximum collector-emitter breakdown voltage of 45V and a continuous collector current rating of 100mA. The device operates with a transition frequency of 100MHz and supports junction temperatures up to 150°C. Packaged in a DFN1412-6 surface-mount format, it offers a power dissipation capacity of 480mW. This component serves as a compact solution for general-purpose switching and amplification tasks within space-constrained electronic designs.
Feature Summary
- Dual NPN configuration housed in a compact DFN1412-6 package
- High thermal stability supporting junction temperatures up to 150°C
- General-purpose performance suitable for switching and amplification
Applications
- General-purpose switching circuits
- Signal amplification stages
- Embedded system interface control
Procurement Notes
Verify the specific suffix 'RAZ' against official Nexperia documentation to confirm the DFN1412-6 package type and pinout configuration. Ensure that the required gain selection matches the datasheet specifications for this variant. Confirm compliance with automotive or industrial standards if the application demands high reliability, as standard variants may differ from AEC-Q101 qualified parts.
Selection Notes
Select the BC847RAZ when a dual NPN topology is required in a small footprint. The 45V rating and 100mA current limit define its operational boundaries for low-power applications. Consider the 100MHz transition frequency for signal integrity requirements. Compare against single-transistor solutions if board space allows, but prioritize this array for cost-effective dual-channel implementations.
Part Context
This component belongs to the BC847 series of NPN general-purpose transistors produced by Nexperia. While the standard BC847 utilizes an SOT23 package, the BC847RAZ variant specifically employs the DFN1412-6 form factor. It provides a dual-transistor alternative to discrete components, maintaining the electrical characteristics typical of the broader family while offering distinct packaging advantages for modern surface-mount assembly processes.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult official Nexperia cross-reference guides for compatible alternatives.
