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The BC847SH6727XTSA1 is a dual NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SMD/SMT SOT-363-6 package. The device features a maximum DC collector current of 200 mA and a continuous collector current of 100 mA. Key voltage ratings include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. The component has a power dissipation (Pd) of 250 mW and a gain-bandwidth product (fT) of 250 MHz. It operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification.
Verify the specific ordering suffix to confirm the tape-and-reel quantity and packaging variant, as these details define the physical delivery format. Confirm that the AEC-Q100 qualification status aligns with the target application's reliability requirements. Ensure the SOT-363-6 footprint matches the PCB layout constraints before finalizing procurement decisions.
Select this component when a dual NPN BJT is required in a small outline package with automotive qualification. Compare the 45 V VCEO rating against the circuit's maximum operating voltage to ensure adequate headroom. Evaluate the 250 mW power dissipation limit relative to the expected thermal environment and duty cycle to prevent overheating during operation.
This part belongs to the BC847 series of dual transistors produced by Infineon Technologies. It shares the same electrical characteristics and pinout as the BC847SH6433XTMA1 but differs in the ordering suffix, which typically indicates variations in packaging or reel specifications rather than functional changes.
The BC847SH6433XTMA1 is a confirmed substitute with identical electrical parameters and automotive qualification. Verify that the replacement's packaging format meets the assembly line requirements.