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The BC848AE6327HTSA1 is an NPN silicon small-signal transistor from Infineon Technologies, designed for general-purpose amplification and switching applications. It operates within a collector-emitter voltage of 30 V and supports a continuous collector current of 100 mA. The device features a DC current gain (hFE) range of 110 to 220, ensuring consistent performance across variations. Packaged in the compact SOT-23-3 surface-mount format, it offers a transition frequency of 250 MHz and a power dissipation capacity of 330 mW. The component is rated for operation between -65°C and +150°C, providing robust thermal stability for diverse electronic environments.
Verify the complete ordering code against official Infineon documentation to ensure correct hFE binning and packaging specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Cross-reference the specific suffix codes to validate tape-and-reel quantities and handling requirements prior to procurement.
Select this component when a standard NPN transistor with moderate gain and low voltage ratings is required. The SOT-23-3 footprint suits space-constrained designs. Ensure the application current remains below 100 mA and voltage stays within 30 V limits. Consider thermal management if power dissipation approaches 330 mW continuously.
This part belongs to the BC848 series of small-signal transistors, widely used in consumer electronics and industrial control systems. The 'A' designation typically indicates a specific gain binning range. As a silicon-based device, it provides reliable performance for general analog and digital switching functions in modern electronic assemblies.
Consult official Infineon substitution guides for verified equivalents. Generic replacements may differ in gain ranges or thermal characteristics. Verify pinout compatibility and electrical parameters before integrating alternative components into existing designs.