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The BC848ALT1G is an NPN silicon general-purpose transistor from the BC846ALT1G series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 30 V. The device supports a continuous collector current of 100 mA with a maximum power dissipation of 225 mW in a SOT-23 package. Electrical characteristics include a DC current gain (hFE) ranging from 110 to 450 at IC = 10 mA and VCE = 5 V. The transition frequency (fT) is specified at 100 MHz.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm that the component meets required environmental compliance standards such as RoHS. Ensure the selected variant aligns with the intended application's voltage and current ratings before procurement.
Select this component when a low-voltage NPN transistor with moderate current handling is required. The 30 V rating distinguishes it from higher voltage variants within the same series. Consider the SOT-23 footprint for space-constrained surface mount designs.
This part belongs to the BC846ALT1G series of NPN silicon transistors. It shares the same physical package and thermal characteristics as other members of the family but differs in breakdown voltage specifications. The series includes variants with different gain ranges and voltage ratings to suit diverse circuit requirements.
BC848BLT1G
The maximum collector-emitter voltage (VCEO) is 30 V.
Yes, devices with the S or NSV prefix are AEC-Q101 qualified and PPAP capable for automotive use.
The DC current gain (hFE) typically ranges from 110 to 450 at IC = 10 mA and VCE = 5 V.