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The Diotec Semiconductor BC848B is a general-purpose NPN bipolar junction transistor (BJT) designed for surface-mount applications. It utilizes an SOT-23 (TO-236) package and operates with a maximum collector-emitter voltage of 30 V, a collector-base voltage of 30 V, and an emitter-base voltage of 5 V. The device supports a continuous DC collector current of 100 mA and a peak collector current of 200 mA. Power dissipation reaches 300 mW in industrial grades and 200 mW in commercial grades at 25°C ambient temperature. The component features three distinct DC current gain groups, with the 'B' group providing a minimum hFE of 200 at IC = 2 mA and VCE = 5 V.
Verify the specific ordering suffix to confirm the manufacturing grade. The absence of a suffix indicates an industrial grade component, while the -C suffix denotes a commercial grade variant. Confirm compliance with automotive standards by checking for the -Q or -AQ suffixes, which indicate AEC-Q101 qualification. Ensure the selected part matches the required current gain group for the intended circuit design.
Select the BC848B when a low-voltage NPN transistor is required for signal handling or switching tasks. The B suffix specifies a medium-gain range suitable for linear amplification where higher gain is not critical. Consider the thermal resistance limits when designing for high ambient temperatures. Verify that the 30 V breakdown voltage aligns with the system's maximum operating conditions.
This component belongs to the BC846A through BC850C series of SMD universal NPN transistors manufactured by Diotec Semiconductor. The series provides various voltage ratings and gain configurations within the same SOT-23 footprint. The BC848B specifically addresses applications requiring lower voltage tolerance compared to the BC846 or BC847 variants.
BC848A and BC848C are available within the same series offering different current gain characteristics.