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Product Detailed Parameters
- Description：TRANSISTOR NPN 30V 100MA SOT-23
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The onsemi BC848BLT3G is an NPN silicon general-purpose transistor from the BC846ALT1G series, housed in a SOT-23 (TO-236) surface-mount package. It features a collector-emitter breakdown voltage of 30 V and a continuous collector current rating of 100 mA. The device offers a DC current gain (hFE) range of 150 to 450 at a collector current of 2 mA and 5 V. Key electrical characteristics include a transition frequency of 100 MHz and a total power dissipation of 225 mW on an FR-5 board. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Automotive-grade qualification with AEC-Q101 certification and PPAP capability for unique site requirements.
- High electrostatic discharge protection exceeding 4000 V via Human Body Model standards.
- Compliant with RoHS directives and manufactured as lead-free and halogen-free.
- Moisture sensitivity level 1 classification ensures robust handling during assembly.
Applications
- General-purpose switching applications
- Low-frequency amplification circuits
- Automotive electronic systems requiring PPAP compliance
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm that the component meets AEC-Q101 requirements if intended for automotive use. Ensure compatibility with Pb-free manufacturing processes. Check for any discontinued status or alternative recommendations from the manufacturer before finalizing procurement decisions.
Selection Notes
Select this component when a low-voltage NPN transistor with moderate gain is required for surface-mount designs. The BC848 variant provides a 30 V breakdown voltage, distinguishing it from higher voltage counterparts like the BC846. Consider the 100 mA current limit and thermal constraints for power dissipation. Verify pinout configuration matches the target PCB footprint design.
Part Context
This part belongs to the BC846ALT1G series of general-purpose NPN silicon transistors produced by onsemi. The series includes variants with different voltage ratings and gain bands, such as BC846, BC847, and BC849. These devices are widely used in consumer electronics and industrial control applications due to their small SOT-23 form factor and reliable performance characteristics.
Replacement Considerations
BC848ALT1G
FAQ
What is the maximum collector-emitter voltage for the BC848BLT3G?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 30 V.
Is the BC848BLT3G suitable for automotive applications?
Yes, versions with the S or NSV prefix are AEC-Q101 qualified and PPAP capable for automotive use.
What is the DC current gain range for the 'B' suffix device?
The DC current gain (hFE) ranges from 150 to 450 when measured at IC = 2.0 mA and VCE = 5.0 V.
