BC848BLT3G

BC848BLT3G

$0.11
  • Description:TRANS NPN 30V 0.1A SOT23-3
  • Series:-

SKU:9dcfe61bab63 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 30V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BC848BLT3G

Overview

The onsemi BC848BLT3G is an NPN silicon general-purpose transistor from the BC846ALT1G series, housed in a surface-mount SOT-23 package. It features a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 290 at IC = 2.0 mA and VCE = 5.0 V. Electrical characteristics include a transition frequency (fT) of 100 MHz and a maximum power dissipation of 225 mW. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • NPN epitaxial silicon planar design for general-purpose amplifier applications
  • AEC-Q101 qualified and PPAP capable for automotive requirements
  • Lead-free, halogen-free, and BFR-free construction compliant with RoHS directives

Applications

  • General purpose amplifier circuits
  • Automotive electronic systems requiring AEC-Q101 qualification
  • Low-power surface mount applications

Procurement Notes

Verify the specific ordering suffix 'LT3G' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the device marking '1K' matches the intended assembly documentation. Ensure the SOT-23 pinout configuration aligns with the target PCB footprint design specifications.

Selection Notes

Select this component when a 30 V collector-emitter breakdown voltage is sufficient for the circuit requirements. The high DC current gain makes it suitable for low-current amplification tasks. Verify that the thermal resistance and power dissipation limits accommodate the expected operating conditions within the specified temperature range.

Part Context

This part belongs to the BC846ALT1G series of NPN general-purpose transistors manufactured by onsemi. The series includes variants with different voltage ratings and gain bands, such as BC846, BC847, and BC849. The BC848 variant specifically provides a 30 V rating, distinguishing it from higher voltage counterparts in the same family.

Replacement Considerations

BC848BLT1G

FAQ

What is the DC current gain range for the BC848B grade?

The BC848B grade has a minimum DC current gain (hFE) of 290 at IC = 2.0 mA and VCE = 5.0 V.

Is the BC848BLT3G suitable for automotive applications?

Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

What is the maximum collector-emitter voltage for the BC848?

The maximum collector-emitter voltage (VCEO) for the BC848 is 30 Vdc.

BC848BLT3GBC848BLT3G
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