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The onsemi BC848BLT3G is an NPN silicon general-purpose transistor from the BC846ALT1G series, housed in a surface-mount SOT-23 package. It features a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 290 at IC = 2.0 mA and VCE = 5.0 V. Electrical characteristics include a transition frequency (fT) of 100 MHz and a maximum power dissipation of 225 mW. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix 'LT3G' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the device marking '1K' matches the intended assembly documentation. Ensure the SOT-23 pinout configuration aligns with the target PCB footprint design specifications.
Select this component when a 30 V collector-emitter breakdown voltage is sufficient for the circuit requirements. The high DC current gain makes it suitable for low-current amplification tasks. Verify that the thermal resistance and power dissipation limits accommodate the expected operating conditions within the specified temperature range.
This part belongs to the BC846ALT1G series of NPN general-purpose transistors manufactured by onsemi. The series includes variants with different voltage ratings and gain bands, such as BC846, BC847, and BC849. The BC848 variant specifically provides a 30 V rating, distinguishing it from higher voltage counterparts in the same family.
BC848BLT1G
The BC848B grade has a minimum DC current gain (hFE) of 290 at IC = 2.0 mA and VCE = 5.0 V.
Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
The maximum collector-emitter voltage (VCEO) for the BC848 is 30 Vdc.