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The onsemi BC848CDXV6T1 is a dual NPN bipolar junction transistor (BJT) array housed in an SOT-563 surface-mount package. It features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. The device has a transition frequency of 100MHz and a maximum power dissipation of 500mW. DC current gain (hFE) is specified at a minimum of 420 when tested at 2mA collector current and 5V collector-emitter voltage. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix, as the provided model lacks the standard 'G' designation found in official documentation. Confirm availability status directly with the manufacturer or authorized distributors, as this specific variant may be discontinued or superseded by updated part numbers like the BC848CDXV6T1G.
Select this component for applications requiring matched dual NPN transistors in a small footprint. Ensure the design accounts for the 30V voltage limit and 100mA current capacity. Verify that the SOT-563 package dimensions fit the PCB layout constraints and that the thermal resistance characteristics meet the system's heat dissipation requirements.
This component belongs to the BC848 series of general-purpose NPN transistors. It is functionally related to other variants such as the BC848B and BC848C, which differ primarily in their DC current gain ranges. The dual-array format distinguishes it from single-transistor packages, offering better matching between devices compared to discrete components.
Publicly confirmed substitute part numbers include BC848CDXV6T5G and BC848CPDW1T1. Verify pinout compatibility and electrical parameter alignment before substitution.