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The onsemi BC848CDXV6T1G is a dual NPN bipolar junction transistor (BJT) array housed in an SOT-563 surface-mount package. It features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. The device offers a minimum DC current gain (hFE) of 420 at 2mA and 5V, with a transition frequency of 100MHz. Maximum power dissipation is rated at 500mW, and the operating junction temperature range spans from -55°C to 150°C. This component is currently listed as obsolete by the manufacturer.
Verify component obsolescence status before design finalization, as this part is marked as discontinued by onsemi. Confirm availability through authorized distributors or secondary market suppliers if immediate procurement is required. Ensure that any substitute components meet the same electrical specifications and package dimensions to maintain board compatibility without redesign.
Select this component when a dual NPN configuration is required in an SOT-563 footprint. Consider the 30V voltage rating and 100mA current limit for appropriate load matching. Evaluate the 100MHz transition frequency against the target signal bandwidth. Verify that the 500mW power dissipation capability aligns with the thermal management strategy of the final assembly.
This part belongs to the BC848 series of small-signal transistors manufactured by onsemi. It shares the BC848 basic product number but specifies the CDXV6 tape-and-reel packaging variant. The SOT-563 package allows for automated surface-mount assembly, distinguishing it from through-hole alternatives in the same family.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult onsemi's official replacement guide or contact technical support for qualified alternatives due to the obsolete status of this specific part number.