SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi BC848CDXV6T5 is a dual NPN bipolar junction transistor array housed in an SOT-563 surface-mount package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device provides a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, with a transition frequency of 100 MHz. Total power dissipation reaches 500 mW when both junctions are heated. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix 'T5' against official documentation to confirm the 8000-unit tape and reel quantity. Confirm that the component meets Pb-Free requirements as stated in the datasheet. Ensure compatibility with the SOT-563 footprint dimensions provided in the package section before finalizing procurement plans.
Select this component for designs requiring dual NPN transistors with high current gain and low power consumption. Verify that the 30 V collector-emitter breakdown voltage aligns with the circuit's maximum operating voltage. Consider the 500 mW total power dissipation limit when designing thermal management strategies for dense PCB layouts.
This part belongs to the BC847/BC848 CDXV6T series of dual general-purpose transistors manufactured by onsemi. It shares the same physical package and pinout as the BC847 variant but differs in voltage ratings. The T5 suffix indicates a specific tape and reel packaging format containing 8000 units per reel.
The BC848CDXV6T1G serves as a lead-free alternative with identical electrical characteristics but utilizes a 4000-unit tape and reel packaging format instead of the 8000-unit configuration found in the T5 variant.