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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk,Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The onsemi BC848CLT1G is an NPN silicon general-purpose transistor from the BC846ALT1G series, housed in a SOT-23 surface-mount package. It features a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a DC current gain (hFE) range of 290 to 520 at IC = 2.0 mA and VCE = 5.0 V. Key electrical limits include a collector-base voltage of 30 V, emitter-base voltage of 5.0 V, and power dissipation of 225 mW. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High DC current gain suitable for amplification applications
- Automotive-grade qualification with AEC-Q101 standards
- Lead-free and halogen-free construction compliant with RoHS directives
Applications
- General-purpose switching circuits
- Small-signal amplification stages
- Automotive electronic systems requiring PPAP capability
Procurement Notes
Verify the specific ordering suffix 'LT1G' corresponds to the standard tape and reel packaging configuration. Confirm that the 'C' suffix indicates the high-gain binning variant required for the design. Ensure the component meets the necessary environmental compliance standards for the target assembly process.
Selection Notes
Select this part when a high-gain NPN transistor is needed in a compact SOT-23 footprint. The BC848 variant provides lower voltage ratings compared to BC846/BC847 but offers higher current gain. Verify that the 30 V collector-emitter rating aligns with the circuit's maximum operating voltage requirements.
Part Context
This component belongs to the BC846ALT1G family of general-purpose NPN transistors manufactured by onsemi. The series includes variants with different voltage and gain specifications, such as BC846, BC847, and BC849. The BC848CLT1G specifically denotes the C-bin gain characteristic within the standard production line.
Replacement Considerations
- BC848ALT1G
- BC848BLT1G
- SBC848CLT1G
FAQ
What is the pinout configuration for the BC848CLT1G?
In the SOT-23 package, Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
Is the BC848CLT1G qualified for automotive applications?
Yes, devices with the S or NSV prefix are AEC-Q101 qualified and PPAP capable. Standard versions may not carry this specific qualification unless specified.
What is the maximum power dissipation of this transistor?
The total device dissipation is 225 mW on an FR-5 board at 25°C ambient temperature.
