BC848CQ-7-F

BC848CQ-7-F

$0.03
  • Description:TRANS NPN 30V 0.1A SOT-23-3
  • Series:-

SKU:ca4dc3735481 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 30V 0.1A SOT-23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:310 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:Automotive
  • Qualification:AEC-Q101

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BC848CQ-7-F

Overview

The BC848CQ-7-F is a silicon NPN bipolar junction transistor manufactured by Diodes Incorporated. It is housed in the SOT-323 surface-mount package and designed for general-purpose amplification and switching applications. The device features a collector-emitter breakdown voltage (Vceo) of 30 V, a maximum continuous collector current (Ic) of 100 mA, and a power dissipation rating of 200 mW. It offers a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, with a transition frequency (fT) of 300 MHz. The component operates within a temperature range of -65°C to +150°C.

Feature Summary

  • High DC current gain ensures efficient signal amplification in low-power circuits.
  • Compact SOT-323 footprint supports automated surface-mount assembly processes.
  • Wide operating temperature range enables reliable performance in demanding environments.

Applications

  • General-purpose signal amplification
  • Low-frequency switching circuits
  • Portable electronic devices

Procurement Notes

Verify the specific suffix 'Q' against the official Diodes Incorporated datasheet to confirm qualification status or environmental compliance details. Ensure the ordering part number matches the exact electrical specifications required for the design. Confirm package type and reel quantity during procurement to avoid discrepancies.

Selection Notes

Select this component when a compact NPN transistor with moderate voltage ratings and high gain is required. Compare the 200 mW power dissipation limit against thermal constraints. Verify that the 30 V breakdown voltage meets circuit requirements. Consider the SOT-323 package size for space-constrained designs.

Part Context

This component belongs to the BC848 series of small-signal NPN transistors from Diodes Incorporated. The series is widely used in consumer electronics and industrial control systems. The BC848C variant specifically denotes a binning category for higher current gain compared to standard versions.

Replacement Considerations

Compatible substitutes include BC848CW-7-F and BC848B-7-F from Diodes Incorporated. Cross-manufacturer equivalents such as MMBT3904 may require pinout verification. Always validate electrical parameters against the original specification before substitution.

BC848CQ-7-FBC848CQ-7-F
$0.03
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