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The BC848CQ-7-F is a silicon NPN bipolar junction transistor manufactured by Diodes Incorporated. It is housed in the SOT-323 surface-mount package and designed for general-purpose amplification and switching applications. The device features a collector-emitter breakdown voltage (Vceo) of 30 V, a maximum continuous collector current (Ic) of 100 mA, and a power dissipation rating of 200 mW. It offers a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, with a transition frequency (fT) of 300 MHz. The component operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'Q' against the official Diodes Incorporated datasheet to confirm qualification status or environmental compliance details. Ensure the ordering part number matches the exact electrical specifications required for the design. Confirm package type and reel quantity during procurement to avoid discrepancies.
Select this component when a compact NPN transistor with moderate voltage ratings and high gain is required. Compare the 200 mW power dissipation limit against thermal constraints. Verify that the 30 V breakdown voltage meets circuit requirements. Consider the SOT-323 package size for space-constrained designs.
This component belongs to the BC848 series of small-signal NPN transistors from Diodes Incorporated. The series is widely used in consumer electronics and industrial control systems. The BC848C variant specifically denotes a binning category for higher current gain compared to standard versions.
Compatible substitutes include BC848CW-7-F and BC848B-7-F from Diodes Incorporated. Cross-manufacturer equivalents such as MMBT3904 may require pinout verification. Always validate electrical parameters against the original specification before substitution.