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The BC848CWT1G is a single NPN silicon small-signal bipolar junction transistor manufactured by onsemi. It is housed in the SOT-323 surface-mount package. The device supports a maximum continuous collector current of 100 mA and a collector-emitter voltage of 30 V. Key electrical characteristics include a minimum DC current gain (hFE) of 420 at 2 mA, a transition frequency of 100 MHz, and a power dissipation rating of 200 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official onsemi documentation to confirm exact binning and packaging specifications. Ensure the requested part number matches the required gain group and reel configuration. Cross-reference datasheet revisions to confirm compliance with current environmental standards and pinout definitions before finalizing procurement orders.
Select this component when a compact NPN transistor with high gain is required for low-voltage applications. The SOT-323 package offers a smaller footprint compared to standard SOT-23 devices. Consider the 200 mW power dissipation limit and thermal management requirements for the specific PCB layout during the design phase.
This component belongs to the BC848 series of general-purpose NPN transistors produced by onsemi. The series includes variants with different gain ranges and packaging options, such as SOT-23 and SOT-323. The BC848C variant specifically denotes a higher minimum current gain threshold compared to A or B graded parts within the same family.
Compatible substitutes include BC848C from other manufacturers like Nexperia or Panjit, provided they meet the same SOT-323 package and electrical parameter requirements.