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The BC848CWT1G is an NPN silicon general-purpose transistor from onsemi, housed in a SC-70 (SOT-323) package. It features a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a minimum DC current gain of 420 at IC = 2.0 mA and VCE = 5.0 V. It has a transition frequency of 100 MHz and a total power dissipation of 200 mW. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix 'WT1G' against official documentation to confirm the SC-70 package and tape & reel shipping configuration. Ensure compliance with RoHS standards and lead-free requirements as specified by the manufacturer. Confirm that the AEC-Q101 qualification status aligns with project needs if automotive or high-reliability criteria are required.
Select this component when a high DC current gain is required for signal amplification within a compact footprint. The 30 V rating suits low-voltage logic interfacing. Verify thermal management capabilities given the 200 mW dissipation limit in the small outline package. Compare against other gain grades if lower amplification suffices for cost optimization.
This part belongs to the BC846/BC847/BC848 series of NPN general-purpose transistors. The 'C' designation indicates the highest gain bin among the variants. The 'WT1G' suffix specifies the SOT-323 package and standard non-automotive shipping format. These devices share common electrical characteristics but differ primarily in their DC current gain ranges.
Direct substitutes include BC848BWT1G for lower gain requirements or BC848AWT1G for different gain bins. Cross-brand equivalents like MMBT3904 may fit electrically but require pinout verification. Ensure any replacement matches the SC-70 package dimensions and thermal resistance characteristics.