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The BC849AW is an NPN silicon small-signal transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 200 mW of power. Key electrical characteristics include a transition frequency of 100 MHz and a minimum DC current gain (hFE) of 200 at 2 mA and 5 V. The component is housed in a surface-mount SOT-323 package.
Verify the manufacturer designation as Taiwan Semiconductor Corporation, distinct from other vendors using similar part numbers. Confirm the specific suffix 'AW' corresponds to the 30V variant in the official datasheet. Ensure the ordering code matches the exact package type and compliance requirements. Cross-reference the manufacturer's part number against distributor listings to avoid confusion with equivalent parts from other suppliers.
Select this component when a compact NPN transistor with moderate voltage handling and high current gain is required. The SOT-323 package offers space efficiency for dense PCB layouts. Consider the 30V breakdown voltage limit for circuit design margins. Verify thermal management capabilities given the 200 mW power dissipation rating in the chosen enclosure.
This component belongs to the BC846–BC850 series of NPN general-purpose transistors. The 'B' suffix typically denotes a specific hFE binning range, while 'W' indicates tape and reel packaging. The BC849AW specifically targets applications needing reliable switching and amplification in a miniature form factor, widely used in portable devices and industrial control modules.
Direct substitutes include BC849BW, BC849C, and BC849CW from various manufacturers like Nexperia or Panjit, provided pinouts and electrical ratings align. Verify that replacement parts meet the same RoHS and AEC-Q101 qualification standards if automotive use is intended.